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机构地区:[1]华中科技大学应用电子工程系
出 处:《电力电子》2010年第3期66-69,65,共5页Power Electronics
摘 要:由于线路杂散电感的存在,IGBT(insulated gate bipolar transistor)开通关断时将在开关管两端产生电压尖峰。为了研究其的影响,需要对线路杂散电感进行抽取。为此,本文提出一种基于IGBT开关瞬态电压、电流波形的杂散参数抽取方法。在IGBT的开通过程中,考虑了IGBT反并联二极管的反向恢复过程,并且利用由该过程引起电压尖峰进行线路的杂散电感的抽取;在IGBT的关断过程中,通过对关断波形进行了更详细的分析,给出更精确的线路杂散电感的抽取方法。最后,将该方法应用于一台75kVA的单相逆变器,实验结果证明了本方法的有效性与正确性。Because of the existing of the stray inductance, the voltage peak can be observed :during the transient switching period of the IGBT(insulated gate bipolar transistor). To research its effect, the extraction of the stray inductance is necessary. This paper proposes a new extraction method based on the transient voltage and current waveforms of the IGBT. During the turning on period of the IGBT, the reverse recovery effect of the anti-parallel diode of the IGBT is taken into consideration, and the voltage peak occurred by the reverse recovery is used to extract the stray inductance; dunng the turning off period of the IGBT, the more detail analysis is given and the more exact extraction method is presented. Finally, the proposed method is applied to a single phase inverter prototype with 75kVA capability, the experimental results show the validity of the analysis.
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