一种廉价电极的并五苯场效应晶体管  

Pentacene field-effect transistors with cheap electrode

作　　者：周建林[1,2] 陶春兰[2] 

机构地区：[1]重庆大学通信工程学院电子工程系,重庆400044 [2]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《光电子．激光》2009年第12期1595-1598,共4页Journal of Optoelectronics·Laser

摘　　要：采用底栅顶接触结构,研究制备了以并五苯为有源层、聚甲基丙烯酸甲酯(PMMA)为绝缘层的全有机场效应晶体管(OFET),其中绝缘层采用溶液旋涂法制备,电极采用MoO3/Al双层电极。与传统采用单一Au为电极的器件相比,采用双层电极的器件性能大幅提高,经测试,器件的迁移率达到了0.133cm2/Vs,开关电流比可以达到2.61×105。对采用MoO3修饰层提高性能的作用机理进行了详细论证。A kind of organic field-effect transistor（OFET） is fabricated with poly-methylmethacrylate（PMMA） as the gate insulator and pentacene as the active layer.Compared with traditional OFETs which have single layer source/drain electrode,our transistor has double-layers S/D electrode.The results demostrate the performance of OFET can be improved obviously by using such double-layers electrode. Then,OFET can be operated with the mobility of 0.133 cm^2/Vs and the on/off current ratio of 2.61×10^5.The role of MoO3 is also discussed.

关 键 词：有机晶体管 MOO3 双层 电极 

分 类 号：TN386[电子电信—物理电子学]