Electrical Field Distribution in Terahertz SI-GaAs Photoconductive Antennas  

作　　者：施卫 张真真 侯磊 

机构地区：[1]Department of Applied Physics, Xi' an University oT Technology, Xi' an 71005d

出　　处：《Chinese Physics Letters》2010年第8期169-171,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 50837005 and 10876026, and the National Basic Research Program of China under Crant No 2007CB310406.

摘　　要：Terahertz signals emitted from three photoconductive antennae based on semi-insulating GaAs and with different gap sizes are tested. These signals represent that the distribution of electrical field between electrode gaps and electrical field enhancement on the anodes is testified. Two main causes of this phenomenon are the different movabilities of electrons and holes and the induced current which is brought by the electrons on arriving at the anodes. The electrical fieM distributes in a large region, which extends from tens to hundreds of micrometers and it is decided by the gap size.Terahertz signals emitted from three photoconductive antennae based on semi-insulating GaAs and with different gap sizes are tested. These signals represent that the distribution of electrical field between electrode gaps and electrical field enhancement on the anodes is testified. Two main causes of this phenomenon are the different movabilities of electrons and holes and the induced current which is brought by the electrons on arriving at the anodes. The electrical fieM distributes in a large region, which extends from tens to hundreds of micrometers and it is decided by the gap size.

分 类 号：TN304.23[电子电信—物理电子学] O441.1[理学—电磁学]