Co-occurrence of Dominant Direct and Indirect Transitions in Low Temperature Sputtered Indium Tin Oxide Thin Films on Polymers  

作　　者：殷学松 唐武 翁小龙 邓龙江 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054

出　　处：《Chinese Physics Letters》2010年第8期186-189,共4页中国物理快报（英文版）

基　　金：Supported by Program for New Century Excellent Talents in University （NCET-09-0265）, Sichuan Provincial Science Foundation for Youths （No 2010JQ0002）, State Key Laboratory for Mechanical Behavior of Materials, Xi＇an Jiaotong University （No 201011005）, and Foundation Franco Chinoise pour la Science et ses Applications （FFCSA）, respectively.

摘　　要：Indium tin oxide （ITO） layers are prepared on polymethylmethacrylate and polyethylene terephthalate by rf- magnetron sputtering at room temperature. Their 3D-AFM images and visible transmittance spectra are contrastively characterized and studied. An interesting morphological effect of the polymer substrates on their top ITO layers is observed. Dominant direct and indirect transition types deduced from optical spectra are surprisingly found in ITO films on different polymers. Furthermore, qualitative band structures are figured, and some theoretical discussions about the correlation of optical band structure, interface/surface morphology and carrier density are also presented.Indium tin oxide （ITO） layers are prepared on polymethylmethacrylate and polyethylene terephthalate by rf- magnetron sputtering at room temperature. Their 3D-AFM images and visible transmittance spectra are contrastively characterized and studied. An interesting morphological effect of the polymer substrates on their top ITO layers is observed. Dominant direct and indirect transition types deduced from optical spectra are surprisingly found in ITO films on different polymers. Furthermore, qualitative band structures are figured, and some theoretical discussions about the correlation of optical band structure, interface/surface morphology and carrier density are also presented.

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]