Molecular Dynamical Simulations on a-C：H Film Growth from C and H Atomic Flux： Effect of Incident Energy  

作　　者：权伟龙 李红轩 赵飞 吉利 杜雯 周惠娣 陈建敏 

机构地区：[1]State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 [2]School of Mathematics, Physics and Software Engineering, Lanzhou Jiaotong University, Lanzhou 730070

出　　处：《Chinese Physics Letters》2010年第8期228-231,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 50705093 and 50575217, the Science Fund for Creative Research Groups of the National Natural Science Foundation of China under Grant No 50421502, and the National Basic Research Program of China under Grant No 2007CB607601.

摘　　要：Molecular dynamical simulation is carried out to investigate the effects of the incident energy on a-C：H film growth from C and tt atomic flux. Our simulations show that the film growth at low incident energy （1 eV） is dominated by the adsorption of H and C atoms. At moderate incident energy （10 and 20eV）, the abstraction reaction of incident H atoms with H atoms adsorbed at the surface becomes important. At high incident energy （30 and 40eV）, the a-C：H film growth is a two-step process： one is the adsorption and the shallow implantation of C atoms, and the other is the deep implantation of H atoms.Molecular dynamical simulation is carried out to investigate the effects of the incident energy on a-C：H film growth from C and tt atomic flux. Our simulations show that the film growth at low incident energy （1 eV） is dominated by the adsorption of H and C atoms. At moderate incident energy （10 and 20eV）, the abstraction reaction of incident H atoms with H atoms adsorbed at the surface becomes important. At high incident energy （30 and 40eV）, the a-C：H film growth is a two-step process： one is the adsorption and the shallow implantation of C atoms, and the other is the deep implantation of H atoms.

分 类 号：O484.1[理学—固体物理] TG111.4[理学—物理]