Comparative Study on Hole Transport in N, N＇-bis（naphthalen-l-yl）-N, Nt- bis（pheny） Benzidine and 4, 4＇, 4″-tri（N-carbazolyl）triphenylamine  

作　　者：乔现锋 陈江山 马东阁 

机构地区：[1]State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 [2]Graduate School of the Chinese Academy of Sciences, Beijing 100049

出　　处：《Chinese Physics Letters》2010年第8期256-259,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 20921061, 50973104 and 60906020, the National Basic Research Program of China under Grant Nos 2009CB623604 and 2009CB930603, the Foundation of Jilin Research Council （20080337, 20090127）, the Foundation of Changchun Research Council （2007GH06）, and State Key Laboratory on Integrated Optoelectronics, Jilin University.

摘　　要：Hole transport characteristics in N,N＇-bis（naphthalen-l-yl）-N,N＇-bis（pheny） benzidine （NPB） and 4, 4＇, 4″- tri（N-carbazolyl）triphenylamine （TCTA） are comparatively investigated. The current density-voltage （J - V） characteristics of hole-only devices based on NPB and TCTA at different temperatures and thicknesses show that the hole current is dominated by the bulk conduction with an exponential trap distribution. Detailed analyses of the J- V characteristics give the trap densities Nt of （6.3 ± 0.3） × 10^18 and （1.9 ±0.02）× 10^18 cm^3, characteristic trap depths of 135 ± 6 and 117 ± 5 meV, hole mobifities of （8.1 ± 0.5） × 10^-5 and （1.9 ± 0.1）× 10^-4 cm^2 v^-1s^-1 for NPI3 and TCTA, respectively. It is found that TCTA exhibits higher hole mobility. Obviously, this is directly related to the lower trap density and shallow trap depth in TCTA films, leading to good charge carrier transport.Hole transport characteristics in N,N＇-bis（naphthalen-l-yl）-N,N＇-bis（pheny） benzidine （NPB） and 4, 4＇, 4″- tri（N-carbazolyl）triphenylamine （TCTA） are comparatively investigated. The current density-voltage （J - V） characteristics of hole-only devices based on NPB and TCTA at different temperatures and thicknesses show that the hole current is dominated by the bulk conduction with an exponential trap distribution. Detailed analyses of the J- V characteristics give the trap densities Nt of （6.3 ± 0.3） × 10^18 and （1.9 ±0.02）× 10^18 cm^3, characteristic trap depths of 135 ± 6 and 117 ± 5 meV, hole mobifities of （8.1 ± 0.5） × 10^-5 and （1.9 ± 0.1）× 10^-4 cm^2 v^-1s^-1 for NPI3 and TCTA, respectively. It is found that TCTA exhibits higher hole mobility. Obviously, this is directly related to the lower trap density and shallow trap depth in TCTA films, leading to good charge carrier transport.

分 类 号：TN383.1[电子电信—物理电子学] O625.631[理学—有机化学]