分步反应法制备SiC掺杂MgB_2超导线材的研究  

Study on SiC-doped MgB_2 Superconducting Wires Fabricated by Two-step PIT

作　　者：单迪[1,2] 熊晓梅[2] 刘国庆[2] 焦高峰[2] 闫果[2] 周廉[1,2] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,西安710072 [2]西北有色金属研究院,西安710016

出　　处：《材料导报》2010年第14期5-7,共3页Materials Reports

基　　金：国家自然科学基金资助项目(50877067)

摘　　要：以干燥的B粉和Mg粉为原料,采用分步反应法制备了SiC(40～45μm)掺杂的MgB2/Nb/Cu超导线材。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)研究了在650℃热处理温度下不同掺杂量对所制备样品的相组成、微观结构的影响。采用标准四引线法测定了样品的电阻温度曲线,结果表明,当该工艺第二步热处理温度为650℃时,反应不完全,应适当升高温度;同时高SiC掺杂量有利于在MgB2线材中引入更多B位C掺杂,表现为Tc略有降低,从而提高了其磁通钉扎特性。MgB2/Nb/Cu superconducting wires are fabricated by two-step PIT process using dry B and mg powders through SiC（40-45μm）doping. The phase identities, microstructure are investigated by X-ray diffraction （XRD）, scanning electronic microscopy（SEM）. R-T curves are measured by standard four-probe method. The results show that when the heat treatment temperature is 650℃ in the second step, the reaction is not full, so the temperature should be raised. At the same time more SiC-doped is in favor of introduction into more C substitution for B bites, resulting in superconducting Tc decreases slightly, to enhance flux pinning capability.

关 键 词：MGB2 超导线材 SIC掺杂 微观结构 超导电性 

分 类 号：TM26[一般工业技术—材料科学与工程]