硅气相浸渍反应制备SiC/C复合材料的研究  

Preparation of SiC/C Composites by Si Gaseous Infiltration

作　　者：王伟[1] 金志浩[2] 关堂新 

机构地区：[1]长安大学环境科学与工程学院化工系,西安710054 [2]西安交通大学材料科学与工程学院,西安710049 [3]海军驻合肥地区军事代表室,合肥230031

出　　处：《材料导报》2010年第12期26-28,共3页Materials Reports

基　　金：国家自然科学基金(50572084);中央高校基本科研业务费专项资金(CHD2009JC143)

摘　　要：以滤纸和酚醛树脂为原料,经模压固化、碳化制备了具有三维不规则孔隙结构的多孔碳,再经过高温气相渗硅得到SiC/C复合材料。SEM结果表明,SiC/C复合体遗传了多孔碳前驱体的显微结构,同时SiC/C复合体具有较好的弯曲强度和气孔率。提出了一种简单的反应模型,对硅的气相反应和扩散过程进行了解释。Porous carbon perform with three-dimensional irregular hole structure is fabricated by mold stac- king, drying and earbonization process using filter paper and phenolic resin as raw material and the SiC/C composites is obtained via gaseous silicon infiltration into the carbon perform. SEM observation reveals that the irregular intercon- nected microstructure of SiC/C composites inherite from carbon perform, at the same time, SiC/C composites have better bending strength and porosity. A sample reaction mechanism model is proposed for silicon gaseous reaction and diffusion.

关 键 词：多孔碳 气相浸渍 SIC陶瓷 反应机理 

分 类 号：TQ127.11[化学工程—无机化工]