微晶硅渐变带隙太阳电池的模拟计算研究  

Study on Simulation of Graded Band-gap Pin-type Microcrystalline Silicon Thin-film Solar Cells

作　　者：韩兵[1] 周炳卿[1] 郝丽媛[1] 王立娟[1] 那日苏[1] 

机构地区：[1]内蒙古师范大学物理与电子信息学院,功能材料物理与化学自治区重点实验室,呼和浩特010022

出　　处：《材料导报》2010年第12期76-79,共4页Materials Reports

基　　金：国家自然科学基金资助项目(50662003);内蒙古自然科学基金资助项目(2009MS0806)

摘　　要：运用AMPS软件结合相关实验数据,利用微晶硅带隙与材料晶相比的关系,对pin型微晶硅薄膜太阳电池i层带隙渐变结构的总光生载流子产额、载流子复合速率等参数进行了模拟,并与普通pin型微晶硅薄膜太阳电池进行了对比分析。结果表明,一方面带隙渐变结构增加了进入微晶硅i层作为活性层的光吸收;另一方面渐变各层之间存在缺陷和复合中心,影响载流子收集。对于带隙递增型微晶硅(μc-Si∶H)薄膜太阳电池,当i层总厚度为1.2μm时,其光电转化效率为14.843%。Using AMPS software and related experimental data, the relationship between mobility gap and crystalline volume fraction of microcrystalline silicon, on total photogenerated carriers generation rate and photogener- ated carriers recombination of intrinsic layer graded band-gap microcrystalline silicon solar cells are simulated, and comparison for general solar cells are analyzed. The results show that on the one hand, the structure of graded band- gap increase light absorption of microcrystalline silicon i-layer into the active layer. On the other hand, there are de- fects and recombination centers between all graded layers, and collection of carriers are influenced. For the increasing bandgap-type μc-Si：H thin-film solar cells, when the total thickness of i-layer is 1.2μm, 14. 843% a conversion effi- ciency is achieved.

关 键 词：渐变带隙 微晶硅 太阳电池 

分 类 号：TN302[电子电信—物理电子学] TN36