水平温梯冷凝法生长ZnGeP_2单晶  

Growth of ZnGeP_2 by horizontal gradient freeze method

作　　者：吴海信[1] 陈林[1] 王振友[1] 黄飞[1] 倪友保[1] 毛明生[1] 

机构地区：[1]中国科学院安徽光学精密机械研究所,安徽合肥230031

出　　处：《功能材料》2010年第A01期152-154,158,共4页Journal of Functional Materials

摘　　要：采用高纯(6mol/L)Ge、Zn、P单质为原料,按化学计量比并富P 0.2%配料,通过双温区法合成ZnGeP2多晶粉料,再用水平温梯冷凝法(HGF)生长出尺寸达10mm×20mm×80mm的单晶棒。对单晶进行了X射线衍射、红外透过率、热导率等测试,测试结果表明;单晶完整性好,红外透过率较高;5mm厚晶片(未退火、镀膜)在2～8μm范围内平均透过率可达54%以上;在室温附近(297.34K)热导率为35.89W/(m.K)。ZnGeP2 polycrystal was synthesized directly from high pure（6mol/L） Zn,Ge and red P elements according to the ZnGeP2 stoichiometry with a excess of 0.2% P.The ZnGeP2single crystal with dimensions of 10mm×20mm×80mm was obtained by horizontal gradient freeze method with the synthesized polycrystalline material.As-grown crystal was characterized by X-ray diffraction,IR spectrophotometer and physical property measurement system.The results show that the ZnGeP2 crystal is crystallized well and the infrared transmission is relatively high.The infrared transmission of a ZnGeP2 wafer（uncoated,unannealed） with 5mm thickness is above 54% in the region of 2-8μm.The thermal conductivity around room temperature（297.34K）is 35.89W/mK.

关 键 词：磷锗锌 水平温梯冷凝法 X射线粉末衍射 红外透过率 热导率 

分 类 号：TB34[一般工业技术—材料科学与工程] O782.9[理学—晶体学]