BiFeO_3/Bi_(3.25)La_(0.75)Ti_3O_(12)膜的介电弛豫行为研究  

Study on Dielectric Relaxation Behavior of BiFeO_3/Bi_(3.25)La_(0.75)Ti_3O_(12) Film

作　　者：李立本[1] 朱卫利[1] 王会娴[1] 陈庆东[1] 李新忠[1] 甄志强[1] 

机构地区：[1]河南科技大学物理与工程学院,河南洛阳471003

出　　处：《新乡学院学报》2010年第3期40-43,共4页Journal of Xinxiang University

摘　　要：认为BiFeO3(BFO)膜和Bi3.25La0.75Ti3O12(BLT)膜都是漏电的弛豫铁电体,应用麦克斯韦-维格纳机制研究了生长在Pt/Ti/SiO2/Si衬底上的双层膜BiFeO3/Bi3.25La0.75Ti3O12的介电弛豫行为。发现BFO膜的特性显著影响BFO/BLT膜的介电弛豫行为。理论结果在温度高于400K时与实验吻合很好。推断BLT膜的多晶取向及二价铁离子在其中的扩散,导致其中出现杂乱无章的极化纳米微区,BLT膜的弛豫特性则在低温被抑制。Both BiFeO3 （BFO） film and Bi3.25La0.75Ti3O12 （BLT） film are considered as leakage current of Relaxor ferroelectrics.Maxwell-Wagner （M-W） theory is used to study the dielectric relaxation behavior of BiFeO3 （BFO）/Bi3.25La0.75Ti3O12 （BLT） film grown on Pt/Ti/SiO2/Si substrate.The results show that the characteristics of BFO film affect the dielectric relaxation behavior of BFO/BLT film obviously.The theory results agree well with the experiment data when the temperature is above 400 K.It is inferred that the polycrystalline orientation of BLT film and the diffusion of Fe2＋ irons in BLT lead to the presence of disorganized polar nanoregions（PNRs） in BLT film.The relaxation characteristics of BLT film is inhibited at low temperature

关 键 词：BFO/BLT 弥散铁电体 麦克斯韦-维格纳机制 介电弛豫 

分 类 号：O484.42[理学—固体物理]