激光脉冲波形对烧蚀Si靶表面温度的影响  

Influence of laser pulse shape on surface temperature of Si-target

作　　者：王世俊[1] 王英龙[1] 丁学成[1] 梁伟华[1] 邓泽超[1] 褚立志[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《强激光与粒子束》2010年第8期1843-1846,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(10774036);河北省自然科学基金项目(E2008000631);河北省教育厅基金项目(Z2007222);河北省光电材料重点实验室项目;河北大学自然科学基金项目

摘　　要：利用双温方程对激光烧蚀Si靶的过程进行了数值模拟,并结合合适的初始条件和边界条件,研究了在飞秒、皮秒激光作用下,脉冲波形(矩形、梯形、三角形和高斯形)对Si靶表面载流子和晶格温度分布的影响。结果表明:激光功率密度是影响载流子温升的主要因素,矩形脉冲激光烧蚀Si靶表面载流子的峰值温度最高,而高斯分布的脉冲引起靶面载流子峰值温度最低。可见,激光脉冲波形对Si靶表面载流子的温度分布具有重要影响。所得结果可为制备高质量的薄膜提供理论依据。Numerical simulation was applied to the study of femto/picosecond laser-target interaction by two-temperature equation with proper initial and boundary conditions.The influence of laser pulse shapes on the carrier and lattice temperatures on the surface of Si-target was investigated.The results indicate that the main factor of temperature increasing is laser pulse power density.Pulse shapes：significantly effect the temperature distribution of the carriers on the Si-target surface,the temperature peak for rectangle pulses is the largest,and the temperature peak of Guassian pulses is the smallest.The conclusions are the theoretical basis of preparing excellent thin films.

关 键 词：激光烧蚀 双温方程 脉冲波形 载流子 耦合时间 

分 类 号：TN304.055[电子电信—物理电子学]