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作 者:刘继华[1] 李智群[1,2] 王利丹[1] 李伟[1,2] 章丽[1,2]
机构地区:[1]东南大学射频与光电集成电路研究所,南京210096 [2]东南大学射频集成电路与系统教育部工程研究中心,南京210096
出 处:《高技术通讯》2010年第7期744-749,共6页Chinese High Technology Letters
基 金:863计划(2007AA01Z2A7);江苏省'六大人才高峰'资助项目
摘 要:采用SMIC 0.18μm CMOS工艺设计了应用于无线传感网(WSN)的接收信号强度指示器(RSSI),其核心电路是采用跨导放大器构成的限幅器、半波整流器和相应的偏置电路。其工作在电流模形式下,对工艺角和温度具有良好的补偿特性。芯片测试结果表明:在电源电压为1.8V时,RSSI的直流功耗为4.14mW,2MHz输入信号频率下的检测范围为-58~-7dBm(以50Ω阻抗作参考),对应的输出指示直流电压为0.48~1.45V,检测斜率约为18.2mV/dB,非线性误差小于±0.7dB。芯片面积为0.654mm×0.430mm。A received signal strength indicator (RSSI) for wireless sensor networks (WSNs) was designed using the SMIC 0.18p.m CMOS technology. The core part of its whole circuit contains a half-wave rectifier and a corresponding bias circuit, and a limiting amplifier composed of transconductance amplifiers. When the proposed RSSI operated on the current mode, the temperature and process dependence was compensated. The chip was measured under the voltage of 1.8V, and it had the DC power consumption of 4.14mW. When the input signal strength was changed from - 58dBm to -7dBm at the frequency of 2MHz, the corresponding output DC voltage changed from 0.48V to 1.45V with a nonlinearity error of ± 0.7dB, and the detection slope was about 18.2mV/dB. The area of the chip was 0.654mm × 0.430mm.
关 键 词:无线传感网(WSN) CMOS 接收信号强度指示器(RSSI) 限幅放大器 半波整流器
分 类 号:TN851[电子电信—信息与通信工程]
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