CuxTe背接触层对CdTe光伏器件性能的影响  

Influence of Cu_xTe back contact on CdS/CdTe photovoltaic device

作　　者：宋慧瑾[1] 郑家贵[1] 冯良桓[1] 夏庚培[1] 王文武[1] 贺剑雄[1] 李愿杰[1] 鄢强[2] 

机构地区：[1]四川大学材料科学与工程学院,成都610064 [2]核工业西南物理研究院,成都610041

出　　处：《中国科技论文在线》2009年第4期283-287,共5页

基　　金：高等学校博士学科点专项科研基金(20050610024)

摘　　要：研究了由共蒸发制备出的CuTe多晶薄膜的性能及其对CdTe光伏器件性能的影响。研究表明,刚沉积的CuTe薄膜为非晶相,退火后,随着退火温度的升高,不同配比的样品有着不同程度的物相转变,其中Cu/Te为1:1.44的薄膜多晶转变最为明显,结晶度较高。以CuTe结构为主相的CuxTe薄膜作为背接触层电池,性能改善不显著,转换效率随膜厚的增加呈递减趋势;以Cu1.44Te结构为主相的CuxTe薄膜作为背接触电池,转换效率有极大提升,在膜厚40nm处电池呈现最高转换效率;Cu2Te为背接触主相的电池相对于Cu1.44Te为背接触主相的电池,器件性能略有下降,但优于CuTe为背接触主相的电池。CuxTe polycrystalline thin films were prepared by co-evaporation method.The influence of the film characteristic on the CdS/CdTe photovoltaic device performance was investigated by XRD.The results show that as deposited CuxTe thin films were amorphous phase.While after annealing,samples were polycrystalline phases with increasing temperature.Especially,when NCu：NTe was 1：1.44 the film showed more evident polycrystalline phase and the crystallization degree increased.When the main CuTe phase structure was used as the back contact layer of CdTe solar cells,the characteristic of the device did not be improved and conversion efficiency（η） decreased.On the contrary,when the main Cu1.44Te phase structure was used as the back contact layer,η increased.Especially,when the thickness of the film was 40 nm,η was the biggest.Compared with the back contact layer of Cu1.44Te phase structure,the back contact layer of Cu2Te phase structure made the characteristic of CdTe solar cells decreased a little,but better than that without back contact layer.

关 键 词：太阳电池材料 共蒸发 CuTe薄膜 背接触层 CdTe光伏器件 

分 类 号：TM914.4[电气工程—电力电子与电力传动]