单晶连铸铝线材的导电性能  

ELECTRICAL PROPERTY OF CCSC ALUMINUM WIRE

作　　者：范新会[1] 李建国[2] 傅恒志[2] 

机构地区：[1]西安工业学院材料工程系 [2]西北工业大学凝固技术国家重点实验室

出　　处：《中国有色金属学报》1999年第1期87-90,共4页The Chinese Journal of Nonferrous Metals

基　　金：凝固技术国家重点实验室开放课题资助

摘　　要：测试了单晶连铸铝线材的室温导电性能，单晶连铸工业纯铝的电阻率平均为２．６４５５×１０－８Ωｍ，比金属型多晶试样表面细晶区降低１１．５％，比中心粗晶区降低８．１％。晶界的有无对电阻率的影响很大，而晶界的多少对电阻率的影响较小。晶界对电阻率的影响，归因于晶界上大量存在的空位、位错及杂质对电子散射的综合效应。The electrical properties of single crystal aluminum wire made by the technique of continuous casting of single crystal (CCSC) metals were measured and analyzed. The results indicated that the effect of with or without grain boundary is significant to specific resistance, but the effect of quantity of grain boundaries is much smaller. The specific resistance of CCSC single crystal aluminum is 2.645 5×10 -8 Ω·m, which is 11.5% lower than that of fine crystal sample cut out near the surface of die casting rod, and 8.1% lower than that of the coarse crystal sample cut out at the central of die casting rod. The influence of grain boundary to specific resistance is the combination emission effects of dislocations, lattice vacant sites and impurities, which are largely gathered at grain boundary.

关 键 词：连续铸造 电阻率 晶界 铝线材 单晶 导电性能 

分 类 号：TM241.014[一般工业技术—材料科学与工程]