流动注射-化学发光法测定痕量锇(Ⅳ)的研究及应用  

Study on Flow-Injection Chemiluminescence for the Determination of Trace Amount Os(IV) and Its Application

作　　者：韩鹤友[1] 何治柯[1] 罗庆尧[1] 曾云鹗[1] 

机构地区：[1]武汉大学化学系,武汉430072

出　　处：《冶金分析》1999年第2期1-3,共3页Metallurgical Analysis

摘　　要：基于丙酮在吐温４０一氢氧化钾一过氧化氢一O_ｓ（Ⅳ）体系中增强Ｏ_ｓ（Ⅳ）的化学发光，采用流动注射进样技术，建立了测定痕量锇（Ⅳ）的新的化学发光分析法．方法的线性范围为１．０Ｘ１~－８～１．０Ｘ１０~－６Ｏ（Ⅳ）／ｍＬ检出限为２．０Ｘ１０~－９ｇ／ｍ，对１０Ｘ１０~－７ｇ／ｍＬＯｓ（Ⅳ）标准溶液测定１１次的相对标准偏差为３．０％．拟定方法用于贵金属精矿中痕量锇的测定，结果满意。本文还进行了增敏机理的探讨．A new chemiluminescent analysis for the determination of trace amount Os (VI) by flow--injection was proposed in this paper, based on acetone enhancing chemiluminescence of Os(VI) in Tween 40 - KOH -H_2O_2 - Os (VI ) chemiluminescent system. The detection limit is 2.0x10^-9g/mL, the linear range is 1.0x10^-8 1.0x 10^-6g/mL for Os(VI)and the relative standard deviation is 3.0% for 11 measurements of 1.0x 10^-7g/mL for Os(VI). The proposed method has been applied to the determination of Os(VI) in precious metal ores with satisfatory results. The mechanism of acetone enhancing was also investigated.

关 键 词：流动注射 化学发光 吐温40 饿 贵金属精矿 测定 

分 类 号：O614.824[理学—无机化学]