CCD纵向抗晕结构设计与优化  

Design and Optimization of CCD Image Sensor with Vertical Anti-blooming Structure

作　　者：武利翻[1] 

机构地区：[1]西安邮电学院,陕西西安710121

出　　处：《现代电子技术》2010年第16期172-174,共3页Modern Electronics Technique

摘　　要：为了抑制CCD图像传感器在强光照射时出现光晕和弥散现象,建立了CCD纵向抗晕结构模型,运用半导体器件数值模拟软件MEDICI,对建立的纵向抗晕CCD器件结构进行数值计算。结果表明:1PW层杂质浓度越低,电势越高,则电子势垒越低,则导入衬底的过量载流子越多,对应的抗晕能力越强。得到了CCD纵向抗晕结构的一种优化结构。A model of CCD vertical anti-blooming structure is proposed to eliminate blooming and smear of CCD image sensor in bright light.MEDICI is a semiconductor device numerical simulation software which can be used to compute the value of established CCD vertical anti-blooming structure.Results show that anti-blooming has an increased performance,because that the electronic potential barrier is lower and the more excess carriers are imported into the substrate following the declining of the 1PW impurity concentration.An optimum structure is obtained.

关 键 词：CCD 光晕 纵向抗晕 器件仿真 

分 类 号：TN915.43[电子电信—通信与信息系统] TP212[电子电信—信息与通信工程]