IGBT在无汞平面光源驱动电源中的应用  

Application of IGBT in Driving Power Supply of Mercury Free Flat Fluorescent Lamp

作　　者：孙永魁[1] 陈帅宇[1] 刘震[1] 耿海[1] 熊博[1] 

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,陕西西安710049

出　　处：《真空电子技术》2010年第3期53-56,共4页Vacuum Electronics

摘　　要：本文对绝缘栅双极晶体管(IGBT)在无汞平面光源驱动电源中的应用可行性进行了分析。同时对IGBT和金属氧化物半导体场效应晶体管(MOSFET)的性能进行了比较,对IGBT在无汞平面光源中应用的可行性进行了分析。结果表明IGBT在大电流应用场合更具优越性,同时IGBT的温度特性优于MOSFET,采用IGBT可以简化电路结构。基于上述分析,设计了一组采用IGBT的12寸无汞平面光源的驱动电源,实验结果表明采用IGBT可以简化电路结构,降低电路成本。The application of insulated gate bipolar transistor（IGBT） in driving power supply of mercury free flat lamp（FFL） was analyzed and its performance was compared with MOSFET.It shows that IGBT outperforms in the characteristic of temperature and in large current area,moreover,a simplified circuit can be realized by using it.Based on the results,a 12 inch mercury FFL driving power supply with IGBT was designed.The results show that a low cost driving circuit with simple structure can be achieved by adopting the IGBTs.

关 键 词：绝缘栅双极晶体管 平面光源 驱动电源 发光效率 

分 类 号：TN710.2[电子电信—电路与系统] TM923.32[电气工程—电力电子与电力传动]