电感耦合等离子体原子发射光谱法测定高纯硒中18种杂质元素  

Dertermination of eighteen impurity elements in high purity selenium by inductively coupled plasma atomic emission spectrometry

作　　者：熊晓燕[1] 张永进[2] 王津[1] 

机构地区：[1]广州有色金属研究院分析测试中心,广东广州510651 [2]中南大学材料科学与工程学院,湖南长沙410083

出　　处：《冶金分析》2010年第7期35-38,共4页Metallurgical Analysis

摘　　要：高纯硒采用硝酸溶解并蒸干后于320℃的挥发炉中,挥发40 min,用盐酸溶解残渣后,采用电感耦合等离子体原子发射光谱（ICP-AES）法测定Al、As、Bi、Cd、Co、Cr等18种共存杂质元素的含量。考察了溶解酸的种类、主体硒的挥发条件、硒的残存量及干扰情况、分析谱线的选择等。方法检出限小于30 ng/g,用于测定高纯硒中各杂质元素平均回收率在90%~109%之间,相对标准偏差小于10%,与其他分析方法相对照,测定结果较为吻合。The high purity selenium sample was dissolved with nitric acid.After evaporated to dryness,it was put in a volatilization furnace at 320 ℃ for 40 min.The residual was dissolved with hydrochloric acid,and the content of 18 impurities such as Al,As,Bi,Cd,Co and Cr were determined by inductively coupled plasma atomic emission spectrometry（ICP-AES）.The type of dissolving acids,the conditions for volatilizing matrix selenium,the residual amount of selenium and its interference,and the selection of analytical spectral lines were investigated.The detection limit of method was less than 30 ng/g.The proposed method was applied to the determination of impurities in high purity selenium.The average recovery was 90 %-109 %,and the relative standard deviations（RSD） were smaller than 10 %.The results were in good agreement with those obtained by other analytical methods.

关 键 词：电感耦合等离子体原子发射光谱法 高纯硒 杂质元素 

分 类 号：TQ125.2[化学工程—无机化工]