硅基Zn2SiO4：ZnO薄膜的电致发光  

Electroluminescence from Silicon-based Zn_2SiO_4:ZnO Films

作　　者：张瑞捷[1] 陈培良[1] 马向阳[1] 杨德仁[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,材料科学与工程学系,浙江杭州310027

出　　处：《材料科学与工程学报》2010年第4期498-500,513,共4页Journal of Materials Science and Engineering

基　　金：中国博士后科学基金资助项目(20080441223);浙江省自然科学基金资助项目(R4090055);973资助项目(2007CB613403);科技部国际合作资助项目(2008DFR50250)

摘　　要：利用溶胶-凝胶法在重掺硼硅片(p-Si)上制备Zn2SiO4∶ZnO(ZnO嵌入Zn2SiO4基体)薄膜,在此基础上,制备了Zn2SiO4∶ZnO薄膜发光器件。实验表征了Zn2SiO4∶ZnO薄膜的晶体结构和形貌,并研究了该器件的载流子输运和电致发光特性。研究表明:器件表现出一定的整流特性;此外,器件在正向偏压(p-Si接正极)下可以产生来自于ZnO的电致发光,而在反向偏压(p-Si接负极)下几乎不发光。通过对上述器件在正向和反向偏压的能带图进行分析,对其载流子输运和电致发光机理进行了解释。Silicon-based Zn_2SiO_4∶ZnO（Zn_2SiO_4 matrix embedded with ZnO particles） film light-emitting devices have been fabricated by depositing Zn_2SiO_4∶ZnO films onto p-Si using sol-gel method.The current-voltage characteristics reveal that the devices exhibit rectifying behavior.As the devices are applied with a sufficient forward bias with the positive voltage connected to p-Si,electroluminescence（EL） originated from the ZnO particles is generated.However,the devices do not exhibit detectable EL under a reverse bias.The mechanisms of carrier transport and EL have been tentatively explained in terms of the energy band structures of the devices under forward and reverse biases.

关 键 词：电致发光 氧化锌 硅酸锌 硅 

分 类 号：TB43[一般工业技术] TN304[电子电信—物理电子学]