低温烧结CuO-V2O5-Bi2O3掺杂Zn3Nb2O8陶瓷的微波介电性能  

MICROWAVE DIELECTRIC PROPERTIES OF LOW-TEMPERATURE FIRED Zn_3Nb_2O_8 CERAMICS WITH CuO-V_2O_5-Bi_2O_3

作　　者：林旭平[1] 马景陶[1] 张宝清[1] 周济[2] 

机构地区：[1]清华大学核能与新能源技术研究院,精细陶瓷北京市重点实验室,北京100084 [2]清华大学材料科学与工程系,北京100084

出　　处：《硅酸盐学报》2010年第8期1388-1391,共4页Journal of The Chinese Ceramic Society

基　　金：国家“863”计划(2007AA03Z449)资助项目

摘　　要：研究了CuO–V2O5–Bi2O3作为烧结助剂对Zn3Nb2O8陶瓷的烧结特性、微观结构、相结构及微波介电性能的影响。CuO–V2O5–Bi2O3复合掺杂可以将Zn3Nb2O8陶瓷的烧结温度从1150℃降到900℃。在900℃烧结4h的Zn3Nb2O8–0.25%(质量分数,下同)CuO–1.5%V2O5–1.5%Bi2O3陶瓷的密度达到了理论密度的98.1%,相对介电常数为18.8,品质因数与谐振频率之积为39442GHz。该体系的介电性能和陶瓷的致密度与烧结助剂的含量及烧结温度密切相关,陶瓷的致密度和相对介电常数随CuO–V2O5–Bi2O3烧结助剂含量的增加而增加,同样陶瓷的致密度和相对介电常数也随烧结温度的升高而提高。The influences of CuO–V2O5–Bi2O3 additives on the sintering behavior,phase composition,microstructure and microwave dielectric properties of Zn3Nb2O8 ceramics were investigated. Co-doping of CuO,V2O5 and Bi2O3 can significantly lower the sintering temperature of Zn3Nb2O8 ceramics from 1 150 to 900 ℃. Zn3Nb2O8–0.25% （in mass,the same below） CuO–1.5% V2O5–1.5% Bi2O3 ceramic sintered at 900 ℃ for 4 h has a relative density of 98.1%,a relative dielectric constant of 18.8,and a product of quality factor and resonant frequency at 39 442 GHz. The dielectric properties and relative density of ceramics exhibit a significant dependence on the content of additives and the sintering temperature. The relative density and relative dielectric constant of Zn3Nb2O8 ceramics increase with the increase of CuO–V2O5–Bi2O3 content and the increase of the sintering temperature.

关 键 词：微波介质陶瓷 低温烧结 铌酸锌 五氧化二钒 

分 类 号：TQ174.7[化学工程—陶瓷工业]