Sm掺杂对Ba_4La_(19.33)Ti_(18)O_(54)陶瓷结构和介电性能的影响分析  

A study on the dielectric and microstructural characteristics of Sm doped Ba_4La_(19.33)Ti_(18)O_(54) ceramics

作　　者：娄本浊[1] 

机构地区：[1]陕西理工学院物理系,汉中72003

出　　处：《现代技术陶瓷》2010年第2期15-18,共4页Advanced Ceramics

摘　　要：主要研究了不同Sm掺杂浓度对Ba4La19.33Ti18O54陶瓷的微波介电性能和微观结构的影响。首先利用常规固相反应技术制备了Sm含量y分别为0.0,0.1,0.3,0.5和0.7的五种Ba4(La1-ySmy)9.33Ti18O54陶瓷样品;室温下在0.3～3.0GHz频率范围内,利用网格分析仪测量了这些样品的介电常数和介电损耗因子;结果表明随着Sm掺杂含量的增大,样品介电损耗明显减小,而介电常数只有微小减少。当Sm掺杂含量y=0.5时,样品的介电性能最好。此外,还利用X射线衍射仪和扫描电子显微镜研究了样品的微观结构及随微波介电性能的变化。In this paper,the microwave dielectric properties and structural variation of Sm doped Ba4La19.33Ti18O54 have been investigated.Ba4（La1-ySmy）9.33Ti18O54（y=0.0～0.7）ceramics were prepared by conventional solid state reaction method.The electric permittivity and loss tangent were measured using a network analyzer in the frequency range of 0.3～3.0 GHz at room temperature.The loss tangent decreases significantly upon increasing Sm contents,along with a slight reduction in electric permittivity.A relatively good combination of dielectric properties was obtained for y=0.5.X-ray diffraction and scanning electron microscopy were applied to investigate the microstructure and correlate it with microwave dielectric properties.

关 键 词：微波介电陶瓷 介电性能 微观结构 掺杂陶瓷 

分 类 号：TQ174.756[化学工程—陶瓷工业]