坩埚下降法生长钨酸镉闪烁单晶的晶体缺陷  

Crystal Defects of CdWO_4 Scintillation Crystals Grown by Bridgman Method

作　　者：陈红兵[1] 沈琦[1] 方奇术[1] 肖华平[1] 王苏静[1] 梁哲[1] 蒋成勇[1] 

机构地区：[1]宁波大学材料科学与工程研究所 宁波市新型功能材料及其制备科学国家重点实验室培育基地,宁波315211

出　　处：《人工晶体学报》2010年第4期829-833,共5页Journal of Synthetic Crystals

基　　金：浙江省自然科学基金(Y4090057);宁波市自然科学基金(No.2009610016);宁波大学科研基金(xkl09074),宁波大学王宽诚幸福基金;宁波市新型光电功能材料及器件创新团队(2009B21007)

摘　　要：采用坩埚下降法生长出大尺寸CdWO4单晶,通过光学显微镜、电子探针观察分析了所获CdWO4单晶的典型晶体缺陷,包括晶体开裂、丝状包裹物和晶体黑化。结果表明,CdWO4单晶存在显著的解理特性,常出现因热应力导致的沿(010)解理面的晶体开裂;当采用富镉多晶料进行单晶生长时,所获单晶棒的下部常出现沿轴向分布的丝状包裹物,电子探针分析证实这种丝状包裹物是熔体内过量CdO沉积所致;在氮气氛中进行高温退火处理,CdWO4单晶还会出现黑化现象。Large size CdWO4 single crystals had been grown by Bridgman method. The typical crystal defects in the grown crystals,such as crystal cracking,silk-like inclusions and crystal darkening,were investigated by optical microscope and electron probe microscopic analysis. CdWO4 single crystals show an evident cleavability nature. The crystal cracking often occurs along the cleavage plane （ 010） due to the thermal stress inside the crystals. There are silk-like inclusions distribute along the axis in the lower part of the crystals as they grow from the feed material containing excess CdO. The silk-like inclusions have been verified to be the CdO deposits from the melts by EPMA analysis. The single crystal would be darkened in color as it is annealed in nitrogen atmosphere at high temperature.

关 键 词：钨酸镉 晶体生长 坩埚下降法 晶体缺陷 

分 类 号：O77[理学—晶体学]