一种生长Ga_3PO_7晶体的新助熔剂体系  

A New Flux System for the Growth of Ga_3PO_7 Crystal

作　　者：郭永解[1] 李静[1] 王继扬[1] 尹鑫[1] 韩树娟[1] 王永政[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2010年第4期842-845,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50872066);国家重点研究发展计划(2010CB833103)

摘　　要：在MoO3-K2CO3体系中,借助于自发成核法,与MoO3-Li2CO3体系进行对照,找到一个新的适合Ga3PO7晶体生长的助熔剂体系;在新助熔剂体系下,采用顶部籽晶法生长出厘米级Ga3PO7晶体,晶体尺寸为30mm×21mm×9mm;对其基本性质进行表征,在测试范围内所生长的Ga3PO7晶体透过率均在80%以上,具有高的透过率和宽的透过范围。The new flux system MoO3-K2CO3,which was suitable for the growth of Ga3PO7 crystal,was found by spontaneous nucleation experiments; Ga3PO7 crystal with large size of 30 mm × 21 mm × 9 mm had been grown by the top-seeded solution growth. The basic properties of the as-grown crystal were characterized,and its transmittance is up to 80%. The results reveals that the as-grown Ga3PO7 crystal has a high optical transmittance and a wide optical transparency region.

关 键 词：Ga3PO7晶体 新助熔剂体系 顶部籽晶法 

分 类 号：O782[理学—晶体学]