氧化锡纳米晶的合成与生长  

Synthesis and Growth of SnO_2 Nanocrystal

作　　者：徐加荣[1] 朱克荣[1,2] 戚梦瑶[1] 庄永龙[2] 

机构地区：[1]安徽大学物理与材料科学学院,合肥230039 [2]安徽大学现代实验技术中心,合肥230039

出　　处：《人工晶体学报》2010年第4期912-916,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目(No.50872001);安徽大学人才队伍建设经费资助项目

摘　　要：采用水热法制备了氧化锡纳米晶,通过X射线衍射仪(XRD)和高分辨透射电镜(HRTEM)对氧化锡纳米晶样品的晶体结构、晶粒形貌进行了表征,并研究了氧化锡纳米晶生长和位错的产生机制。结果表明:在退火温度低于500℃时,晶粒生长依靠着周围的非晶成分而长大,纳米晶内部无晶格缺陷;退火温度高于500℃时,晶粒通过相互粘结的方式而长大。晶粒之间的不完全取向粘结导致了缺陷与位错的产生。The SnO2 nanocrystals were successfully synthesized by hydrothermal method and the structures and morphologies of SnO2 nanocrystal were characterized by X-ray diffraction（XRD） and high-resolution transmission electron microscopy （HRTEM）. The growth and dislocation of SnO2 nanocrystal were discussed. The results show that the growth of the nanocrystals depends on amorphous composition and the nanocrystals are defect-free below annealing temperature 500 ℃. However, the growth of nanocrystals depends on bonding with each other above 500℃. Imperfect oriented attachment leads to defects and dislocations in the nanocrystals.

关 键 词：氧化锡纳米晶 位错 水热法 

分 类 号：TB34[一般工业技术—材料科学与工程]