溅射功率对直流磁控溅射法沉积TGZO薄膜性能的影响  

Effect of Sputtering Power on Properties of Ti-Ga Co-doped Zinc Oxide Films Deposited by DC Magnetron Sputtering Method

作　　者：史晓菲[1] 郭美霞[1] 刘汉法[1] 王新峰[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《人工晶体学报》2010年第4期972-976,共5页Journal of Synthetic Crystals

基　　金：山东省自然科学基金(No.ZR2009GL015)

摘　　要：利用直流磁控溅射法在室温水冷玻璃衬底上制备出了高质量的钛镓共掺杂氧化锌(TGZO)透明导电薄膜。研究了溅射功率对TGZO薄膜结构、形貌和光电性能的影响。研究结果表明:溅射功率对TGZO薄膜的结构和电阻率有重要影响。X射线衍射分析表明,TGZO薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。在溅射功率为120W时,实验获得的TGZO薄膜的方块电阻为2.71Ω/□,此时电阻率具有最小值2.18×10-4Ω·cm。实验制备的TGZO薄膜在可见光区范围内平均透过率达到了90%以上。Transparent conducting Ti-Ga co-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by DC magnetron sputtering at room temperature. Micro-structural,optical and electrical properties of TGZO films were investigated. Experimental results show that the sputtering power have great effect on the microstructure and electrical resistivity of TGZO films. All the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis. The crystallite size increases and the electrical resistivity decreases when the sputtering power increases. When the sputtering power is 120 W,the square resistance is 2. 71 Ω/□,then the resistivity has the lowest value 2. 18 × 10-4 Ω·cm. All the films present a high transmittance above 90% in the visible range.

关 键 词：TGZO薄膜 透明导电薄膜 溅射功率 磁控溅射 

分 类 号：TN304[电子电信—物理电子学]