人工调控微结构压电驻极体的热稳定性和电荷动态特性  

Thermal stability and charge dynamics of piezoelectrets with tailored micro-structure

作　　者：曹功勋[1] 张晓青[1] 孙转兰[1] 王学文[1] 娄可行[1] 夏钟福[1] 

机构地区：[1]同济大学物理系波耳固体物理研究所,上海200092

出　　处：《物理学报》2010年第9期6514-6520,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50873078)资助的课题~~

摘　　要：利用表面带有周期性结构的硬质模板,通过冷压工艺将周期结构图案复制到多孔聚四氟乙烯(PTFE)薄膜表面,再经过热黏合工艺与致密氟化乙丙烯共聚物(FEP)薄膜复合,制备出了高度有序的微孔结构复合膜,并用电晕充电的方法对复合膜进行极化处理,最终获得氟聚合物复合膜压电驻极体.借助对这类复合膜压电驻极体介电谐振谱的测量,得到了材料的杨氏模量.并利用等温热老化工艺对它们的压电系数d33的热稳定性进行了考察.最后通过短路热刺激放电谱的测量和分析,讨论了该复合膜在热老化处理后的电荷动态特性.结果表明,通过在多孔PTFE薄膜表面复制模板的周期结构并与致密FEP薄膜热黏合的方法能成功地制备出微结构高度有序的多孔复合膜.通过改变模板的周期结构还可以对复合膜驻极体微结构进行人工调控,进而实现材料力学性能和压电性能的人工控制.本文中制备的复合膜压电驻极体的杨氏模量约为0.53MPa,它们的准静态压电系数d33不仅可高达500pC/N,而且表现出良好的热稳定性,例如在150℃下经过5000min的热老化处理,d33系数还能保持初值的22%.经过热老化处理的复合膜,其脱阱电荷的输运途径以穿越固体介质层为主.The laminated fluoroethylenepropylene （FEP） and porous polytetrafluoroethylene （PTFE） films with regular void structure are prepared by using a rigid template with a periodic-structured surface. The porous PTFE film is firstly patterned with the rigid template surface by applying force on the stack of porous PTFE film and the template,then followed by the fusion bonding process to bond the FEP and patterned porous PTFE together. The corona charging technique is used to make the laminated film piezoelectric,i. e. ,to become piezoelectrets. The Young’s modulus of the laminated FEP /PTFE films is determined by dielectric resonance spectra. The thermal stability of the piezoelectric d33 coefficients are characterized by measuring the decay of d33 at elevated temperatures. The charge dynamics in such FEP / PTFE piezoelectrets is investigated by analying the thermally stimulated discharge current spectra in short circuit. The results show that laminated FEP /PTFE films with very regular void structure can be made by using rigid template and fusion bonding process. The Young＇s modulus of such films is about 0. 53 MPa. The maximum quasi-static piezoelectric d33 coefficient up to 500 pC /N is achieved. The laminated FEP /PTFE films show improved thermal stability. For example, the remnant d33value is around 22% of the initial value for the sample annealed at 150 ℃ for 5000 min. For the samples after annealing treatment,the main drift path of the detrapped charges is through the solid dielectric layer.

关 键 词：有序结构 压电驻极体 压电性 电荷动态特性 

分 类 号：O482[理学—固体物理]