锰掺杂对Ba(Zr,Ti)O_3陶瓷压电与介电性能的影响  

Effect of MnO_2 additive on the piezoelectric and dielectric properties of Ba(Zr,Ti)O_3 ceramics

作　　者：丁南[1] 唐新桂[1] 匡淑娟[1] 伍君博[1] 刘秋香[1] 何琴玉[2] 

机构地区：[1]广东工业大学物理与光电工程学院,广州510006 [2]华南师范大学物理与电信学院,广州510006

出　　处：《物理学报》2010年第9期6613-6619,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10774030);广东省自然科学基金(批准号:8151009001000003)资助的课题~~

摘　　要：采用氧化物固相反应法制备了锰掺杂改性的Ba(Zr0.06Ti0.94)O3陶瓷.研究了锰的掺杂量对Ba(Zr0.06Ti0.94)MnxO3(BZTM)陶瓷的结构、介电和压电性能的影响.实验发现,当锰含量x<0.5mol%时进入晶格,使材料压电性能提高,损耗减小,表现出受主掺杂的特性;当锰含量x>0.5mol%时进入晶界,过量的锰将在晶界积聚对畴壁和晶界起钉扎作用,从而降低压电性能.随着锰掺杂量进一步增加,弛豫程度变得明显,弥散指数增加.当锰掺杂量为x=0.3%—0.4%范围时,获得d33值为195—220pC/N,介电常数εr为7500以上,损耗tanδ低于2%的性能优良压电陶瓷.Ba（Zr0.06Ti0.94）MnxO3ceramics were prepared by oxide solid state reaction method. The effects of Mn-doping on the phase structure,piezoelectric and dielectric properties of BZT ceramics were studied. Mn ions preferentially incorporated in the lattice acted as donors when the concentration of Mn ions is below 0. 5 mol% ,which improves the piezoelectric coefficient and decreases the dielectric loss. When the concentration of MnO2 doping is larger than 0. 5 mol% ,it accumulated at the grain boundaries and deteriorates the piezoelectric properties of BZT ceramics as a result of domain pinning effect. With the increase of MnO2 contew,the ferroelectric behaves more diffused. The BZT ceramics doped with x = 0. 3—0. 4 mol% MnO2 showed improved properties with d33 value as high as 195—220 pC /N,dielectric permittivity εr of 7500 and loss tanδ of 2% .

关 键 词：Ba(Zr Ti)O3陶瓷 锰掺杂 介电性能 压电性能 

分 类 号：O482.4[理学—固体物理]