半导体激光治疗创伤术后愈合不良伤口的临床疗效  

Efficacy of semiconductor laser in the treatment of poorly healed wound after trauma surgery

作　　者：石秀秀[1] 张小爽[1] 唐金树[1] 李庆梅[1] 侯树勋[1] 吴金玲[1] 秦江[1] 

机构地区：[1]全军骨科研究所解放军总医院第一附属医院(原304医院)骨科康复中心,100048

出　　处：《中国骨肿瘤骨病》2010年第4期336-338,共3页Chinse Journal Of Bone Tumor And Bone Disease

摘　　要：目的观察半导体激光治疗创伤术后愈合不良伤口的临床疗效。方法 60例创伤术后愈合不良伤口的患者分成两组,各30例,两组患者均常规护理、加强营养,局部清创、换药,治疗组增加半导体激光局部照射治疗,照射时间为10min,每日1次,7次为一疗程。结果治疗组治愈率为86.67%,对照组治愈率为46.67%。两组患者的治愈率及治愈时间比较,差异均有统计学意义(P<0.05),治疗组明显优于对照组。轻度愈合不良痊愈率88.89%(32/36);中度愈合不良痊愈率60.87%(14/23);1例重度愈合不良疗效达到显效;3组比较,轻度愈合不良伤口的痊愈率较中、重度愈合不良的高,差异有显著意义(P<0.05)。结论半导体激光治疗创伤术后愈合不良伤口可明显提高治愈率,使愈合时间缩短,且操作简便。Objective To observe the efficacy of semiconductor laser in the treatment of poorly healed wound after trauma surgery. Methods 60 patients were randomized into 2 groups： the conventional group （n=30） and the treatment group （n=30）. All patients underwent conventional nursing, nutritional support, local debridement and dressing change. The treatment group underwent localized semiconductor laser therapy for 10 m daily as an addition. A course of treatment was 7 days. Results The total cure rate of the treatment group was 86.67﹪, while that of the control group was 46.67﹪.There was a significance difference of the cure rate and healing time between the two groups （P〈0.05）. The cure rate of the treatment group was much higher and its healing time was shorter than the control group. The cure rate of mild poorly healed wounds was 88.89% （32/36）. The cure rate of moderate poorly healed wounds was 60.87% （14/23）. 1 patient with severe poor healing showed significant healing after the therapy. The mild poorly healed wound showed a better curate than the moderate and severe poorly healed wound. The difference was significant. Conclusions Semi-conductor laser therapy can increase the cure rate, shorten the healing time, and is easy to perform.

关 键 词：激光技术 愈合不良 

分 类 号：R641[医药卫生—外科学]