真空热蒸发生长CdX(X=S,Te)纳米线研究性实验  

Exploring experiments on the growth of CdX(X=S,Te) nanowires by vacuum thermal evaporation

作　　者：简基康[1] 吴荣[1] 尚飞[1] 邹华[1] 

机构地区：[1]新疆大学物理科学与技术学院,新疆乌鲁木齐830046

出　　处：《物理实验》2010年第8期1-4,8,共5页Physics Experimentation

基　　金：新疆大学21世纪高等教育教学改革工程资助(No.XJU2008JGZ08)

摘　　要：将一维纳米结构的气—液—固生长机制与大学材料物理实验真空热蒸发镀膜结合,设计了生长半导体纳米线的研究性实验.利用金属铋或锡作为催化剂,真空热蒸发生长了CdS,CdTe等半导体纳米线.纳米线产物形貌均匀,并可实现选择性生长.Vacuum thermal evaporation, as an experiment of college physics, has been modified to prepare semiconductor nanowires based on the one-dimensional vapor-liquid-solid mechanism. Some nanowires including CdS and CdTe have been synthesize by the new method using bismuth or tin as catalyst. The exploring experiments based on such method have been discussed and some good results have been presented.

关 键 词：真空热蒸发镀膜 纳米线 气-液-固机制 

分 类 号：O782[理学—晶体学]