10位CMOS数模转换器在中子和γ混合环境下的综合辐射效应  

Synergistic effect of neutron and gamma irradiation on 10-bit CMOS digital-to-analog converter

作　　者：刘岩[1] 杨善潮[1] 林东生[1] 崔庆林[2] 陈伟[1] 龚建成[1] 王桂珍[1] 白小燕[1] 郭晓强[1] 

机构地区：[1]西北核技术研究所,西安710024 [2]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《强激光与粒子束》2010年第9期2186-2190,共5页High Power Laser and Particle Beams

基　　金：国家重点实验室基金项目(9140C090405)

摘　　要：研究了在反应堆中子和γ射线综合辐照环境下CMOS工艺10位数模转换器(DAC)的辐射效应。通过对DAC在γ辐射环境、中子辐射环境、中子和γ混合辐射环境以及中子预辐照后进行γ射线辐照下的效应对比发现,在中子和γ混合辐射环境下会产生电离总剂量效应加剧现象,即一定混合程度的中子和γ同时辐照会增强CMOS器件的辐射效应。This paper presents the experiment results of the combined irradiation by neutron and gamma ray on SDA9760,a 10-bit CMOS digital-to-analog converter. The electrical and functional tests were conducted in four types of irradiation：neutron,gamma ray,combined irradiation of neutron and gamma ray,and gamma ray after neutron irradiation. The experiment results show that the mixed neutron and gamma irradiation can induce a synergistic effect on the sample,i.e. the increase of total ionizing dose effect. Compared with neutron or gamma ray radiation,the device exhibits considerably severer degradation under neutron and gamma synergistic irradiation.

关 键 词：综合辐射效应 中子和γ混合环境 CMOS数模转换器 电离总剂量效应 位移损伤 

分 类 号：TN47[电子电信—微电子学与固体电子学] TL99[核科学技术—核技术及应用]