In_2O_3准一维纳米结构的可控制备研究  

Study of In_2O_3 Quasi-One Dimension Nanostructures Controllable Synthesis Approach

作　　者：池凌飞[1] 孙凯[1] 赵传熙[1] 吴萍[1] 

机构地区：[1]汕头大学物理系,广东汕头515063

出　　处：《汕头大学学报（自然科学版）》2010年第3期32-38,共7页Journal of Shantou University：Natural Science Edition

基　　金：汕头大学青年科研基金资助项目(YR07001)

摘　　要：以In2O3和活性炭混合物为蒸发源,利用化学气相沉积法在硅衬底上制备了In2O3纳米线.对In2O3纳米线的生长机理进行讨论,认为在衬底表面维持一定的氧化铟基团浓度是导致出现In2O3纳米线的原因,因此可以通过调节氧化铟基团的浓度去控制准一维In2O3纳米结构的生长.The In2O3 nanowires were synthesized on the silicon substrates by the chemical vapor deposition method,which used the mix of indium oxide powder and active carbon as vapor source.The growth mechanism of In2O3 nanowires was discussed.It was found that the growth of In2O3 nanowires was attributed to the proper indium oxide species concentration on the substrate surface.Therefore,the growth of quasi-one dimension In2O3 nanostructures can be controlled by tuning the indium oxide species concentration.

关 键 词：氧化铟 纳米线 可控制备 生长机理 

分 类 号：TN304[电子电信—物理电子学]