自旋场效应晶体管中极化输运特性研究  

Study of Spin-Polarized Transport in Spin Fet

作　　者：颜玉珍[1] 

机构地区：[1]嘉应学院物理与光信息科技学院,广东梅州514015

出　　处：《嘉应学院学报》2010年第8期34-38,共5页Journal of Jiaying University

基　　金：国家自然科学基金项目(10204008)

摘　　要：自旋极化电流从铁磁金属注入到半导体的主要障碍是铁磁体和半导体电导率的不匹配。但最近研究结果表明可以通过运用适当的方法来克服这个困难。我们基于自旋场效应晶体管的模型及Landauer-Buttiker公式,求得电子通过半导体异质结的电导,得出了自旋电子器件中极化电荷的输运特性。Detailed theoretical investigations have revealed that the main obstacle for spin injection from an F metal source into a semiconductor originates from the large mismatch between the conductivities of metals and semiconductors.However,the recent theoretical investigations show that this obstacle may be overcome through appropriate methods.In this paper the conductance of semiconductor heterojunction is obtained and the character of the spin polarized transport in spin FET is educed.

关 键 词：自旋场效应晶体管 自旋-轨道耦合 自旋极化输运 

分 类 号：TN386[电子电信—物理电子学]