电解液浓度对双槽法腐蚀多孔硅的影响  

Effect of NaCl Solution on Porous Silicon Etched by Double-cell Electrochemistry

作　　者：钟福如[1,2] 吕小毅[3] 贾振红[1] 黄晓辉[1] 

机构地区：[1]新疆大学信息科学与工程学院,乌鲁木齐830046 [2]石河子大学信息科学与技术学院,新疆石河子832003 [3]西安交通大学电子与信息工程学院,西安710049

出　　处：《半导体光电》2010年第4期550-552,556,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60968002);教育部新世纪优秀人才支持计划项目(NCET-05-0897);新疆维吾尔自治区高校科学研究计划项目(XJEDU2006110)

摘　　要：设计了一种电化学双槽腐蚀装置,研究了不同电解液的浓度对制备多孔硅形貌和光学特性的影响。研究结果表明采用此装置制备的多孔硅孔洞均匀性好,并且随NaCl电解液浓度的增加,制备的多孔硅孔径呈减小的趋势,发光强度有所增强。Porous silicon（PS）are prepared by double-cell electrochemistry etching with different NaCl solution concentrations.The effects of the NaCl solution concentrations were investigated.The PS surface were characterized by Scanning Electron Microscope（SEM）.The results show that the porous silicon obtained by this method has good uniformity,and its aperture decreases and its luminescence will be enhanced as the concentration of NaCl solution increases.

关 键 词：多孔硅 NaCl电解液 光致发光 

分 类 号：TN304.12[电子电信—物理电子学]