国外电阻阵列非均匀性校正技术概述  

Resistor Array Nonuniformity Correction Technology from Foreign Countries

作　　者：李艳[1] 孟庆虎[1] 吴永刚[1] 

机构地区：[1]中国空空导弹研究院凯迈测控,河南洛阳471009

出　　处：《红外技术》2010年第8期453-456,共4页Infrared Technology

基　　金：航空基金项目;编号:20080112005

摘　　要：MOS电阻阵列(以下简称电阻阵列)作为当前红外成像制导武器和前视红外系统等探测器的测试、性能评估以及系统动态仿真验证,其致命的弱点就是其固有的辐射非均匀性。根据收集到的国外电阻阵列非均匀性的相关文献,介绍了现有电阻阵列非均匀性校正的方法及其优缺点,目前国内在这一领域尚开始起步,对一些非均匀性校正技术的关键点和难点还掌握得不够,因此这些校正技术对我们以后的研究提供了一个参考。The paper introduced the advantages and disadvantages of the MOS resistor array nonuniformity correction technique,which is based on the references published from Australia Defence Science and Technology Organization and American Optical Sciences Corporation.Domestic technique in this field is not apprehend enough,especially in the key points and the difficulties of the correction process.Therefore these techniques of resistor array nonuniformity correction from foreign countries have offered a good reference and guidance foe the following study.

关 键 词：电阻阵列 非均匀性校正 动态红外场景投射 稀疏网格 

分 类 号：TN216[电子电信—物理电子学]