溶胶-凝胶法制备ZnO:Sn(TZO)薄膜  

Transparent conducting ZnO:Sn(TZO) films deposited by the sol-gel method

作　　者：孙惠娜[1] 刘静[1] 高美珍[1] 

机构地区：[1]兰州大学物理科学与技术学院

出　　处：《功能材料与器件学报》2010年第4期394-398,共5页Journal of Functional Materials and Devices

基　　金：教育部科技重大项目(309027);甘肃省科技攻关基金项目(2GS057-A52-004)

摘　　要：以普通玻璃为衬底,采用溶胶-凝胶旋涂法制备出c轴择优取向性、高可见光透过率以及低电阻率的ZnO：Sn（TZO）薄膜。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、四探针及紫外-可见分光光度计（UV-VIS）等手段,研究了不同Sn掺杂浓度对薄膜的晶体结构、表面形貌、电学和光学特性的影响。实验结果表明,在500℃的空气中热处理,然后在低温环境快速冷却,得到的TZO薄膜均具有六角纤锌矿结构,且呈c轴择优取向,薄膜在可见光范围内平均透光率超过90%,同时当Sn掺杂浓度为3 at.%时,薄膜的电阻率达到最小值8.2×10-1Ω.cm。Transparent and conductive high-preferential c-axis-oriented Sn-doped ZnO（TZO） thin films have been prepared on common glass substrates by sol-gel spin coating method.The influence of the structure on electrical and optical properties of TZO films are investigated by X-ray diffraction（XRD）,scanning electron microscopy（SEM）,four-point probe method and UV-VIS spectrophotometer,respectively.The result proved that the films are all polycrystalline with a structure of preferred orientation of c-axis ZnO hexagonal wurtzite type.All films show high transmittance of 90 % in the visible light range.The films doped with 3 at.% Sn concentration hold a highly preferred c-axis-oriented column shaped crystalline structure and exhibit the lowest resistivity of 8.2×10-1 Ω·cm.

关 键 词：TZO薄膜 Sn掺杂浓度 溶胶-凝胶法 结构与形貌 光电特性 

分 类 号：O484.4[理学—固体物理]