磁性多层膜中保护层厚度对磁性层NiFe的影响  

The Effect of the Capping Layer with Different Thinkness to the Magnetic Layer NiFe in Magnetic Multilayers

作　　者：卡马勒.托克达尔汗 拜山.沙德克[1] 

机构地区：[1]新疆大学物理科学与技术学院,新疆乌鲁木齐830046

出　　处：《新疆大学学报（自然科学版）》2010年第3期335-337,共3页Journal of Xinjiang University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(50661005);国家教育部留学回国人员科研启动基金资助项目(030205);新疆大学博士启动基金资助项目(BS050101)

摘　　要：本文主要讲述了SV-TMR结构中以自由层为模拟的多层膜SiO2/NiFe/Ta与SiO2/NiFe/Ru中,不同厚度的保护层钽(Ta)和钌(Ru)对磁性层NiFe的影响.我们采用振动样品磁强计(VSM)和X射线衍射仪(XRD)对该薄膜进行了结构测试和深度剖析,结果表明:改变保护层厚度时,两种样品的饱和磁化强度不变,随Ru厚度的增加,样品SiO2/NiFe/Ru的矫顽力也增加.同时用XRD测量发现,以Ru为保护层生长的样品比Ta为保护层生长的样品具有更好的织构,更好的结晶性.Ru比Ta更适合做磁电阻多层膜的保护层.This paper mainly discussed a series of magnetic thin films SiO2/NiFe/Ta and SiO2/NiFe/Ru with different thinkness of copping layers such as Ta and Ru. On the base of vibrating sample magnetometer（VSM） and X-ray diffraction method （XRD） instrument, we measured the structure and studied the depth information. The results show that the saturated magnetization of samples did not change with increase of the capping layers thickness and the magnetic anisotropy of sample SiO2/NiFe/Ru increased with the increase of thickness of Ru capping layer. On the other hand, the sample SiO2/NiFe/Ru have great crystallization than sample SiO2/NiFe/Ta. As a result, we confirmed that Ru is a better candidant for being capping layer in magnetic multilayers.

关 键 词：磁性薄膜 自由层 保护层 

分 类 号：O484.43[理学—固体物理]