采用IGCT电压型逆变器的高压变频器仿真研究  

Simulation of High-voltage by IGCT Inverter

作　　者：邰晶[1] 王忠庆[1] 

机构地区：[1]中北大学

出　　处：《变频器世界》2010年第8期79-82,共4页The World of Inverters

摘　　要：集成门极换向型晶闸管(IGCT)的优良性能使其适合于实现高—高方式的高压变频调速装置。本文主要应用IGCT中点箝位电压型逆变器的高压变频器进行了仿真研究,搭建了IGCT子电路模型,装置采用IGCT作为电子开关的硬开关的变流器中,换流回路的总电感应尽可能地小,结构尽可能地紧凑,降低杂散电感。仿真结果可以看出安装Rc关断吸收回路后对于抑制关断时IGCT的端部过电压效果显著,IGCT端部最大峰值电压降低了39%,进而增强了设备的安全性与可靠性,并且所安装的RC额定值小,体积小,成本低,这种高压变频器具有很好的性能及可靠性。The Integrated Gate Commutated Thyristor （IGCT）, excellent performance make it suitable for high - way high-pressure high-frequency control devices, the main application IGCT neutral point clamped inverter for high voltage inverter was simulated. Sub-circuit model for IGCT built the device using IGCT as an electronic switch output over-current protection, the use of hard-switch converter, the converter circuit of the total induction as small as possible, the structure compact as possible to reduce stray inductance. Simulation results show that off to install Rc absorbing circuit for inhibiting turn-off time after the end of IGCT voltage effect is remarkable, IGCT end of the maximum peak voltage is reduced by 39%, thereby enhancing the safety and reliability of equipment, and the Installation of RC rating, small size, low cost, high-voltage converter that has good performance and reliability.

关 键 词：IGCT 高压变频器 Pspice建模与仿真 

分 类 号：TN773[电子电信—电路与系统]