9,9′-联蒽薄膜的AFM和XRD研究  

Analysis of 9,9'-bianthracene thin films using atomic force microscopy and X-ray diffraction

作　　者：李建丰[1] 常文利[1] 张春林[1] 张福甲[2] 

机构地区：[1]兰州交通大学数理与软件工程学院,甘肃兰州730070 [2]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《功能材料》2010年第8期1379-1382,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60676033);兰州交通大学"青蓝"人才工程基金资助项目(QL-08-18A)

摘　　要：利用常规的真空蒸发技术,在热氧化硅片的衬底上制备了不同的衬底温度、蒸发温度和蒸发时间条件下的9,9′-联蒽有机薄膜。用原子力显微镜对制备的9,9′-联蒽薄膜形貌进行了观察,研究了9,9′-联蒽的生长模式,并讨论了其表面形貌及岛状晶核分布与生长条件之间的机理。同时,借助X射线衍射仪分析了薄膜的晶体结构。结果表明,在衬底温度为50℃、蒸发温度为180℃、蒸发时间为60s时能够获得具有良好晶体特性的均匀致密的多晶薄膜,其适合作有机场效应晶体管的有源层。The 9,9＇-bianthracene was deposited on SiO2 with dry oxidation by routine vacuum evaporation.The surface morphology of the thin films for 9,9＇-bianthracene was investigated by AFM,which was prepared at different substrate temperatures,vapor temperatures and vapor times.The growing model of 9,9＇-bianthracene was studied.The mechanism between surface morphology island distribution and growth condition was discussed.At the same,using the X-ray diffraction analyzed crystal structure. The thin film grown at 50℃ of substrate temperature,180℃ of vapor temperatures and 60s of vapor times has the excellent crystal performance.

关 键 词：9 9′-联蒽 表面形貌 生长模式 原子力显微镜 

分 类 号：TN304.5[电子电信—物理电子学]