大功率IGBT参数建模与仿真分析  

Modeling and Simulation of High Power IGBT Modules

作　　者：刘超[1] 钱锰[1] 杨明[1] 

机构地区：[1]南京电子技术研究所,南京210039

出　　处：《现代雷达》2010年第8期88-90,94,共4页Modern Radar

摘　　要：介绍了绝缘栅双极性晶体管的模型分类及常见的电力电子仿真软件,并分析了各自的特点。针对2 kV/2 kA全固态调制器组件设计中使用的大功率绝缘栅双极性晶体管(3.3 kV/1.2 kA),根据具体参数,建立了基于Saber的行为模型。重点分析了该模型的静态和动态特性仿真表现。通过对比手册参数曲线和实际测量结果,验证了该大功率绝缘栅双极性晶体管模型的有效性,为大功率脉冲电路的进一步分析和优化设计提供了参考。The different categories of insulated gate bipolar transistor（IGBT） models and power electronic circuit simulators are presented.Features of the different models and simulators are listed.The large power IGBT（3.3 kV/1.2 kA） model is established based on circuit simulators Saber,which was used in 2 kV/2 kA all-solid state modulator modules.The IGBT behavioral model is parameterized.An emphasis of discussion is put on the static characteristic and dynamic simulation performance of the model.By comparing the parameters values of IGBT datasheet as well as the corresponding results of measure,this paper indicates the IGBT model under Saber is comparatively accurate and believable.

关 键 词：绝缘栅双极性晶体管 建模 仿真 大功率调制器 

分 类 号：TN386[电子电信—物理电子学]