Spin Polarizations of Electron with Rashba Couplings in T-Shaped Devices:A Finite Element Approach  

作　　者：朱松 刘会平 易林 

机构地区：[1]Department of Physics,Huazhong University of Science and Technology

出　　处：《Communications in Theoretical Physics》2010年第9期563-572,共10页理论物理通讯（英文版）

基　　金：Supported by the National Science Foundation of China under Grant No.2006CB921605

摘　　要：A generalized finite element formulation is proposed for the study of the spin-dependent ballistic transport of electron through the two-dimensional quantum structures with Rashba spin-orbit interactions （SOI）. The transmission coefficient, conductance, the total and local polarization are numerically calculated and discussed as the Rashba eoefficient, the geometric sizes, and incident energy are changed in the T-shaped devices. Some interesting features are found in the proper parameter regime. The polarization has an enhancement as the Rashba coefficient becomes stronger. The polarization valley is rigid in the regime of the conductance plateaus since the local interference among the polarized multi-wave modes. The Rashba interactions coupling to geometry in sizes could form the structure-induced Fano-Rashba resonance. In the wider stub, the localized spin lattice of electron could be produced. The conductance plateaus correspond to weak polarizations. Strong polarizations appear when the stub sizes, incident energy, and the Rashba coupling coefficient are matched. The resonances are formed in a wide Fermi energy segment easily.

关 键 词：ballistic transport spin polarized transport in semiconductors scattering mechanism spin-orbitcoupling 

分 类 号：O481.1[理学—固体物理]