抗电子发射钼栅极的性能分析  

Characteristics of Electron Emission Resistant Mo-Grid

作　　者：官冲[1,2,3] 张济忠[1,2,3] 廖显恒 

机构地区：[1]清华大学材料科学与工程系 [2]中国科学院上海冶金所离子束开放研究实验室 [3]中国科学院电子所

出　　处：《功能材料》1999年第3期268-270,共3页Journal of Functional Materials

摘　　要：利用真空离子沉积技术在钼栅极的表面分别镀上一层Ｃ膜、Ａｌ膜和ＡｌＴｉＺｒ合金膜，对镀膜后的样品进行寿命试验。用ＳＥＭ和ＸＲＤ分析技术对镀膜样品受阴极活性蒸发物Ｂａ污染前、污染后进行了对比研究。实验结果表明：逸出功较低的Ａｌ在受到Ｂａ污染后，能够生成金属间化合物，从而能够有效地抑制栅极发射；而沉积的Ｃ膜在受到污染后，逐渐被消耗而失去作用；在Ａｌ中加入逸出功较高的ＴｉＺｒ合金后，破坏了金属间化合物的生成，并不能抑制栅极发射。实验说明逸出功低的Ａｌ也可涂覆到栅极上，在栅极工作过程中，当Ａｌ与阴极的蒸发物生成金属间化合物时，可以降低栅极发射。这为开发新的栅极涂覆材料提供了思路。C film,Al film and AlTiZr alloy film were coated on the surfaces of molybdenumgrids by vacuum ion deposition technology.Lifespan tests of modified Mogrid were carried out.The SEM and XRD analysis were performed on these modified Mogrids before and after they were contaminated by active electronemissive substance Ba of the cathode.The experimental results showed that the low work funciton element Al formed intermetallic compounds after the grid was contaminated by electronemissive substance Ba of the cathode,and restrained effectually electron emission of grid.The high work function element C was gradually consumed after it was contaminated,and then lost its nature.The high work function alloy adding into Al did not bate the emitting performance of grid,because intermetallic compound could not be formed.The experimental results suggest that a layer of Al thin film can be selected as coating materials of Mogrid.When the active electronemissive substance of cathode reacted with Al and created the intermetallic compounds during the Mogrid work process,it can depress electron emission of Mogrid.This can be a good idea to develop new coating materials of grid.

关 键 词：钼栅极 逸出功 电子发射 电子管 性能分析 

分 类 号：TN110.1[电子电信—物理电子学]