Microstructure and Ferroelectric Properties of (Bi_(0.9)Ho_(0.1))_(3.999)Ti_(2.997)V_(0.003)O_(12) Thin Films Prepared by Sol-gel Method for Nonvolatile Memory  

作　　者：Chengju Fu Zhixiong Huang Jie Li Dongyun Guo 

机构地区：[1]School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China [2]School of Mechanical Engineering, Chongqing University of Science and Technology, Chongqing 400042, China

出　　处：《Journal of Materials Science & Technology》2010年第8期679-681,共3页材料科学技术（英文版）

基　　金：supported by the Young Scientists Fund of the National Natural Science Foundation of China under grant No.50902108

摘　　要：The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3＋/V5＋ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm （at applied field of 420 kV/cm）, dielectric constant of 305, dielectric loss of 0.031 （at 1 MHz）, good insulting behavior, as well as the fatigue-free behavior.The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3＋/V5＋ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm （at applied field of 420 kV/cm）, dielectric constant of 305, dielectric loss of 0.031 （at 1 MHz）, good insulting behavior, as well as the fatigue-free behavior.

关 键 词：（Bi0.9Ho0.1）3.999Ti2.997V0.003O12 thin films Sol-gel method Co-substitution Ferroelectric properties Dielectric properties 

分 类 号：TN304.9[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业]