InP系波导和光电探测器的单片集成器件制作  

The Fabrication of Monolithic Integration of InP Optical Waveguide and Photodetector

作　　者：吕章德[1] 杨易[2] 程宗权[2] 

机构地区：[1]浙江绍兴文理学院物理系 [2]中科院上海冶金研究所

出　　处：《光学仪器》1999年第2期37-40,共4页Optical Instruments

摘　　要：报道了应用液相外延（ＬＰＥ）方法，制作了ＩｎＰ／ＩｎＧａＡｓＰ／ＩｎＧａＡｓ半导体光波导和ＩｎＧａＡｓ－ＰＩＮ光电探测器的单片集成器件。The fabrication of monolithic integration of InP/InGaAsP/InGaAs semiconductor optical waveguide and InGaAs PIN photodetector using liquid phase epitaxy(LPE) method is reported. The principal paraneters representing the performance of this device are closed to the level of foreign devices.

关 键 词：光波导 光电集成电路 光电探测器 

分 类 号：TN256[电子电信—物理电子学]