采用全栅型CSTBT^(TM)和镜像发射极检测技术的V1系列IPM  

A Novel Series of IPM ‘V1’ with Internally Paralleled Full Gate CSTBT^(TM) and Mirror Emitter Technology for SC Sensing

作　　者：Marco Honsberg Thomas Radke Nishida Nobuya Uota Shiori 

机构地区：[1]三菱电机欧洲 [2]三菱电机功率器件福岡制作所

出　　处：《电力电子技术》2010年第9期106-108,共3页Power Electronics

摘　　要：为提高电机驱动和DC/DC变换器等功率电源的效率,V1系列智能功率模块(IPM)采用了全栅型CSTBTTM硅片和新开发的专用控制芯片等一系列新技术,其主要应用功率等级为几十千瓦,产品现有电压等级为1.2 kV,电流等级为200A/300 A/450 A,以及电压等级为600 V,电流为400 A/600 A。硅片技术和结构的改善有效地降低了V1系列IPM的结温,从而增加功率循环和热循环能力。同时,V1系列IPM的引脚与之前的2单元V系列IPM兼容。V1-series is a new intelligent power module（IPM） which is mainly developed to increase the efficiency of motor driver and DC/DC converter.For this purpose several new technologies are implemented such as a new full gate CSTBTTM chip and a newly developed dedicated control IC.The V1-series is a power module focussing on applications in the two digit kW-class and,hence it has a line-up of 200 A/300 A/450 A in the 1.2 kV class,and 400 A/600 A rating in 600 V.The chip technology and structural improvements reduce the effective junction temperature and increase the power,and thermal cycling capability of this family of IPMs while keeping widely terminal compatibility with previous 2 in 1 V-series IPMs.

关 键 词：电源 智能功率模块 绝缘栅双极型晶体管 电机驱动 

分 类 号：TN86[电子电信—信息与通信工程]