基片表面状态对Pb_(1-x)Ge_xTe薄膜红外光学性能的影响  

Influence of Substrate Surface Status on Infrared Optical Characteristics of Pb_(1-x)Ge_xTe Films

作　　者：谢平[1] 李斌[1] 张素英[1] 刘定权[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083

出　　处：《红外》2010年第9期14-17,共4页Infrared

摘　　要：在高真空中用热蒸发的方法沉积了碲锗铅(Pb_(1-x)Ge_xTe)薄膜。分析了基片表面状态(粗糙度、晶向、温度)对膜层结构和红外光学特性的影响,发现光滑表面容易得到致密膜层和高红外折射率;随着沉积温度的增加,膜层的短波吸收边(λ_c)往长波方向移动。Pb1-xGexTe films were deposited on Si substrates via thermal evaporation in vacuum. The influence of the surface status（roughness,temperature,crystal orientation） of the substrates on the infrared optical characteristics of the films was analyzed.It was found that denser layers with higher refraction index were easy gained on smooth substrate surfaces.With the increase of the deposition temperature,the short wave absorption edge（λc） of the film would shift toward longer wavelengths.

关 键 词：Pb1-xGexTe 表面状态 红外薄膜 光学常数(n k) 

分 类 号：O484.41[理学—固体物理]