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机构地区:[1]Institute of RF-& OE-ICs,Southeast University [2]SinoChip Microelectronics Co Ltd
出 处:《Journal of Semiconductors》2010年第9期84-87,共4页半导体学报(英文版)
基 金:supported by the National High Technology Research and Development Program of China(No.2007AA01Z2a5)
摘 要:A 1.25 Gb/s laser diode driver(LDD) with pulse width optimization has been implemented in a 0.6-μm BiCMOS process.This paper illustrates the relation between the pulse width distortion(PWD) of the output eye diagram and the driving amplitude from the second pre-amplifier.Also,a specific current setting circuit working together with an LDD is proposed to generate the optimum driving amplitude and to avoid device nonlinearity,temperature variation and process deviation.The measured results show a maximum crossing deviation of -3%and indicate the desired independence and stability.A 1.25 Gb/s laser diode driver(LDD) with pulse width optimization has been implemented in a 0.6-μm BiCMOS process.This paper illustrates the relation between the pulse width distortion(PWD) of the output eye diagram and the driving amplitude from the second pre-amplifier.Also,a specific current setting circuit working together with an LDD is proposed to generate the optimum driving amplitude and to avoid device nonlinearity,temperature variation and process deviation.The measured results show a maximum crossing deviation of -3%and indicate the desired independence and stability.
分 类 号:TN312.8[电子电信—物理电子学]
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