A high precision high PSRR bandgap reference with thermal hysteresis protection  

作　　者：杨银堂 李娅妮 朱樟明 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education,Institute of Microelectronics,Xidian University

出　　处：《Journal of Semiconductors》2010年第9期113-117,共5页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.60725415,60971066);the National High-Tech Research and Development Program of China(Nos.2009AA01Z258,2009AA01Z260);the National Science & Technology Important Project of China(No.2009ZX01034-002-001-005)

摘　　要：To meet the accuracy requirement for the bandgap voltage reference by the increasing data conversion precision of integrated circuits,a high-order curvature-compensated bandgap voltage reference is presented employing the characteristic of bipolar transistor current gain exponentially changing with temperature variations.In addition,an over-temperature protection circuit with a thermal hysteresis function to prevent thermal oscillation is proposed.Based on the CSMC 0.5μm 20 V BCD process,the designed circuit is implemented;the active die area is 0.17×0.20 mm;. Simulation and testing results show that the temperature coefficient is 13.7 ppm/K with temperature ranging from -40 to 150℃,the power supply rejection ratio is -98.2 dB,the line regulation is 0.3 mV/V,and the power consumption is only 0.38 mW.The proposed bandgap voltage reference has good characteristics such as small area,low power consumption, good temperature stability,high power supply rejection ratio,as well as low line regulation.This circuit can effectively prevent thermal oscillation and is suitable for on-chip voltage reference in high precision analog,digital and mixed systems.To meet the accuracy requirement for the bandgap voltage reference by the increasing data conversion precision of integrated circuits,a high-order curvature-compensated bandgap voltage reference is presented employing the characteristic of bipolar transistor current gain exponentially changing with temperature variations.In addition,an over-temperature protection circuit with a thermal hysteresis function to prevent thermal oscillation is proposed.Based on the CSMC 0.5μm 20 V BCD process,the designed circuit is implemented;the active die area is 0.17×0.20 mm^2. Simulation and testing results show that the temperature coefficient is 13.7 ppm/K with temperature ranging from -40 to 150℃,the power supply rejection ratio is -98.2 dB,the line regulation is 0.3 mV/V,and the power consumption is only 0.38 mW.The proposed bandgap voltage reference has good characteristics such as small area,low power consumption, good temperature stability,high power supply rejection ratio,as well as low line regulation.This circuit can effectively prevent thermal oscillation and is suitable for on-chip voltage reference in high precision analog,digital and mixed systems.

关 键 词：bandgap voltage reference curvature-compensated power supply rejection ratio over-temperature protection BCD process 

分 类 号：TN432[电子电信—微电子学与固体电子学]