IR2110在IGBT驱动电路中的应用  

Application of ZR2110 in the IGBT driving circuit

作　　者：江蜀华[1] 国洪觅[1] 褚衍贺[1] 

机构地区：[1]青岛科技大学自动化与电子工程学院,山东青岛266042

出　　处：《微型机与应用》2010年第17期23-24,共2页Microcomputer & Its Applications

摘　　要：针对IGBT的半桥或者全桥的驱动,利用具有双通道集成驱动的IR2110来驱动IGBT。对其自举工作原理进行了分析,同时增加了栅极电平箝位电路,克服了IR2110不能产生负偏压的缺点,并在2kW、400V汽车直流充电器中以此驱动IKW40N120T2电路的试验中验证了其理论分析的正确性。Aiming at the half-bridge or full-bridge driving about IGBT, this paper drives IGBT by IR2110 which has double channels driving, and analyzes the principle of bootstrap, adds the gate clamp circuit at the same time, and get over the disadvantage which can＇t produce negative bias. Besides, this paper validates academic correctness in the experimentation which applies to the IKW40N120T2＇s driving circuit about a car DC charger whose power is nearly to 2kW and the vohage amplitude is 400V.

关 键 词：IR2110 自举 箝位电路 负偏压 

分 类 号：TP211[自动化与计算机技术—检测技术与自动化装置]