基于不同TFT技术的AMOLED像素电路仿真分析  

Simulation and Analysis of AMOLED Pixel Circuits with Different TFT Technologies

作　　者：徐小丽[1] 刘如[1] 郭小军[1] 苏翼凯[1] 

机构地区：[1]上海交通大学电子信息与电气工程学院,上海200240

出　　处：《液晶与显示》2010年第4期565-568,共4页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金(No.60906039)

摘　　要：非晶硅、非晶氧化铟镓锌、多晶硅薄膜晶体管是可用于设计AMOLED像素驱动电路的3种典型的薄膜晶体管(TFT)技术。文中基于3种TFT的模型,针对大尺寸、高分辨率的AMOLED,分别在典型的电压式驱动和电流式驱动像素电路进行了建模仿真,并对仿真结果做了分析和比较。该研究方法为像素电路的设计提供了一定理论依据。Active matrix organic light emitting diode （AMOLED） pixel circuits can be designed based on amorphous silicon, amorphous In-Ga-Zn-O and polycrystalline silicon thin film transistors. In this work, simulations and analysis have been conducted for typical voltage and current driving AMOLED pixel circuits in the three different TFT technologies. The analysis and comparison results provide important guidelines for selecting proper TFT technologies to design large-size and high-resolution AMOLEDs.

关 键 词：AMOLED 非晶硅 非晶氧化铟镓锌 多晶硅 薄膜晶体管 

分 类 号：TN321.5[电子电信—物理电子学]